Data Sheet RFG50N05L, RFP50N05L January 2002 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were.
• 50A, 50V
• rDS(ON) = 0.022Ω
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drive
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
G S
JEDEC TO-220AB DRAIN (FLANGE)
SOURCE DRAIN GATE
©2002 Fairchild Semiconductor Corporation
RFG50N05L, RFP50N05L Rev. B
RFG50N05L,.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P50N02LD |
Niko-Sem |
N-Channel MOSFET | |
2 | P50N02LS |
Niko-Sem |
N-Channel MOSFET | |
3 | P50N03LD |
Niko-Sem |
N-Channel MOSFET | |
4 | P50N03LDG |
Niko-Sem |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
5 | P50N03LSG |
Niko-Sem |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
6 | P50N03LTG |
UNIKC |
N-Channel MOSFET | |
7 | P50N06 |
STMicroelectronics |
STP50N06 | |
8 | P50NE10L |
ST Microelectronics |
STP50NE10L | |
9 | P50NF06 |
INCHANGE |
N-Channel MOSFET | |
10 | P5000EA |
SOCAY |
Thyristor Surge Suppressors | |
11 | P5000LA |
WPM |
Thyristors Solid Protection Device Bidirectional transient voltage suppressors | |
12 | P5000LA |
SOCAY |
Thyristor Surge Suppressors |