P50N03LTG - UNIKC

P50N03LTG N-Channel MOSFET

P50N03LTG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 10mΩ @VGS = 10V 60A TO-220 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 60 38 IDM 150.

Features

oltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 25 1 1.5 3 ±250 Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TC = 125 °C 1 10 On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 150 Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 5V, ID = 20A VGS = 10V, ID = 20A VDS = 10V, ID = 20A 12 20 8 10 40 DYNAMIC Input Capacitance Ciss 960 Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 380 Reverse Transfer Capacitance Total.