P50N02LD - Niko-Sem

P50N02LD N-Channel MOSFET

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P50N02LD TO-252 (D PAK) PRODUCT SUMMARY V(BR)DSS RDS(ON) 25 12mΩ ID 55A D G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche.

Features

C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS STATIC VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TC = 125 °C LIMITS UNIT MIN TYP MAX 25 V 0.8 1.2 2.5 ±250 nA 25 µA 250 1 MAY-24-2001 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P50N02LD TO-252 (D PAK) On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 ID(ON) RDS(ON) .