P50N03LSG - Niko-Sem

P50N03LSG N-Channel Logic Level Enhancement Mode Field Effect Transistor

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P50N03LSG TO-263 (D2PAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 27 12mƸ 50A S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100.

Features

STICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS STATIC VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TC = 125 °C LIMITS UNIT MIN TYP MAX 27 V 1 1.6 3 ±250 nA 25 µA 250 1 DEC-08-2004 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P50N03LSG TO-263 (D2PAK) Lead-Free On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconduc.