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NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI Type No. Reverse V oltage PRV (V olts) Avg. Fwd.Current o at 50 C (mA) Max. Fwd. Voltage Drop at 25 C And I O V F (Volts) o Length L Fig.3 NTD 08 NTD 10 NTD 12 NTD 15 NTD 20 NTD 25 NTD 30 NTD 35 NTD 40 www.
s AMBIENT TEMPERATURE % RATED FWD CURRENT 100 75 50 25 0 0 25 50 75 100 (OC) 125 150 AMBIENT TEMPERATURE FIG.2 NON-REPETITIVE SURGE CURRENT RATINGS 0.1SEC 100 1.0SEC % MAXIMUM SURGE 75 50 25 www.DataSheet4U.com 0 1 2 3 4 5 6 7 8 9 10 20 30 40 50 60 CYCLES(60 Hz) FIG.3 PACKAGE STYLE .030 .033 DIA. _ .02 L + 1.00 MIN. .51 MAX. DIA. ALL DIMENSIONS IN INCHES Maximum lead and terminal temperature for soldering,3/8 inch form case, 5 seconds at 250 O C EDI reserves the right to change these specifications at any time whthout notice. ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFA.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NTD60N02R |
ON |
Power MOSFET |
|
| 2 | NTD60N03 |
ON Semiconductor |
Power MOSFET |
|
| 3 | NTD6414AN |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 4 | NTD6415AN |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 5 | NTD6415ANL |
ON Semiconductor |
N-Channel Power MOSFET 100 V / 23 A / 56 mome Logic Level |
|
| 6 | NTD6416AN |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 7 | NTD6416ANL |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 8 | NTD65N03R |
ON Semiconductor |
Power MOSFET |
|
| 9 | NTD6600N |
ON Semiconductor |
Power MOSFET |
|
| 10 | NTD6N40 |
ON Semiconductor |
Power MOSFET |
|
| 11 | NTD |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |
|
| 12 | NTD |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |
|