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NTD6414AN N-Channel Power MOSFET 100 V, 32 A, 37 mW Features • • • • Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com ID MAX (Note 1) 32 A V(BR)DSS 100 V RDS(on) MAX 37 mW @ 10 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source.
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Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
http://onsemi.com
ID MAX (Note 1) 32 A
V(BR)DSS 100 V
RDS(on) MAX 37 mW @ 10 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Continuous Drain Current RqJC Power Dissipation RqJC Pulsed Drain Current Steady State Steady State TC = 25°C TC = 100°C TC = 25°C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS ID Value 100 $20 32 22 100 117 −55 to +175 32 154 W Unit V V A
N−Channel D
G A °C A .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NTD6415AN |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 2 | NTD6415ANL |
ON Semiconductor |
N-Channel Power MOSFET 100 V / 23 A / 56 mome Logic Level |
|
| 3 | NTD6416AN |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 4 | NTD6416ANL |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 5 | NTD60 |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |
|
| 6 | NTD60N02R |
ON |
Power MOSFET |
|
| 7 | NTD60N03 |
ON Semiconductor |
Power MOSFET |
|
| 8 | NTD65N03R |
ON Semiconductor |
Power MOSFET |
|
| 9 | NTD6600N |
ON Semiconductor |
Power MOSFET |
|
| 10 | NTD6N40 |
ON Semiconductor |
Power MOSFET |
|
| 11 | NTD |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |
|
| 12 | NTD |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |
|