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NTD60 |
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| Part Number | NTD60 |
| Manufacturer | EDI |
| Description | NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI Type No. Reverse V oltage PRV (V olts) Avg. Fwd.... |
| Features |
s AMBIENT TEMPERATURE
% RATED FWD CURRENT
100
75
50
25
0 0 25 50 75 100
(OC)
125
150
AMBIENT TEMPERATURE
FIG.2
NON-REPETITIVE SURGE CURRENT RATINGS
0.1SEC 100 1.0SEC
% MAXIMUM SURGE
75
50
25
www.DataSheet4U.com
0 1 2 3 4 5 6 7 8 9 10 20 30 40 50 60
CYCLES(60 Hz)
FIG.3
PACKAGE STYLE
.030 .033
DIA.
_ .02 L +
1.00 MIN.
.51 MAX. DIA.
ALL DIMENSIONS IN INCHES Maximum lead and terminal temperature for soldering,3/8 inch form case, 5 seconds at 250 O C EDI reserves the right to change these specifications at any time whthout notice.
ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFA... |
| Document |
 NTD60 Data Sheet
PDF 64.84KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NTD60N02R |
ON |
Power MOSFET |
|
| 2 | NTD60N03 |
ON Semiconductor |
Power MOSFET |
|
| 3 | NTD6414AN |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 4 | NTD6415AN |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 5 | NTD6415ANL |
ON Semiconductor |
N-Channel Power MOSFET 100 V / 23 A / 56 mome Logic Level |
|