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NTD6416ANL N-Channel Power MOSFET 100 V, 19 A, 74 mW Features • • • • Low RDS(on) High Current Capability 100% Avalanche Tested These are Pb−Free Devices V(BR)DSS Value 100 $20 19 13 PD IDM TJ, Tstg IS EAS 71 70 −55 to +175 19 50 W A °C A mJ 1 2 TL 260 °C 3 G Unit V V A 100 V http://onsemi.com MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter .
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Low RDS(on) High Current Capability 100% Avalanche Tested These are Pb−Free Devices
V(BR)DSS Value 100 $20 19 13 PD IDM TJ, Tstg IS EAS 71 70 −55 to +175 19 50 W A °C A mJ 1 2 TL 260 °C 3 G Unit V V A 100 V
http://onsemi.com
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Continuous Drain Current Power Dissipation Pulsed Drain Current Steady State Steady State TC = 25°C TC = 100°C TC = 25°C Symbol VDSS VGS ID
RDS(on) MAX 74 mW @ 10 V
ID MAX 19 A
D
tp = 10 ms
Operating and Storage Temperature Range Source .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NTD6416AN |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 2 | NTD6414AN |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 3 | NTD6415AN |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 4 | NTD6415ANL |
ON Semiconductor |
N-Channel Power MOSFET 100 V / 23 A / 56 mome Logic Level |
|
| 5 | NTD60 |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |
|
| 6 | NTD60N02R |
ON |
Power MOSFET |
|
| 7 | NTD60N03 |
ON Semiconductor |
Power MOSFET |
|
| 8 | NTD65N03R |
ON Semiconductor |
Power MOSFET |
|
| 9 | NTD6600N |
ON Semiconductor |
Power MOSFET |
|
| 10 | NTD6N40 |
ON Semiconductor |
Power MOSFET |
|
| 11 | NTD |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |
|
| 12 | NTD |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |
|