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NTD6N40 Preferred Device Power MOSFET 6 Amps, 400 Volts N−Channel DPAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. Features • Higher Current Rating • Lower RDS(on) • Lower Capacitances • Lower Total Gate Charge • Tighter VSD Specifications • Avalanche Energy Specified •.
• Higher Current Rating
• Lower RDS(on)
• Lower Capacitances
• Lower Total Gate Charge
• Tighter VSD Specifications
• Avalanche Energy Specified
• Industry Standard DPAK Surface Mount Package
Typical Applications
• Switch Mode Power Supplies
• PWM Motor Controls
• Converters
• Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MΩ) Gate−Source Voltage
− Continuous − Non−Repetitive (tpv10 ms)
Drain − Continuous − Continuous @ 100°C − Single Pulse (tpv10 μs)
Total Power Dissipation Derate above 25°C To.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NTD60 |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |
|
| 2 | NTD60N02R |
ON |
Power MOSFET |
|
| 3 | NTD60N03 |
ON Semiconductor |
Power MOSFET |
|
| 4 | NTD6414AN |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 5 | NTD6415AN |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 6 | NTD6415ANL |
ON Semiconductor |
N-Channel Power MOSFET 100 V / 23 A / 56 mome Logic Level |
|
| 7 | NTD6416AN |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 8 | NTD6416ANL |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 9 | NTD65N03R |
ON Semiconductor |
Power MOSFET |
|
| 10 | NTD6600N |
ON Semiconductor |
Power MOSFET |
|
| 11 | NTD |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |
|
| 12 | NTD |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |
|