NTD60N03 Power MOSFET 60 Amps, 28 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Un.
3
mJ
°C/W 1.65 67 120
260
°C
1. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2).
*Chip current capability limited by package.
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V(BR)DSS 28 V
RDS(on) TYP 6.1 mW
ID MAX 60 A
N−Channel D
G
S
MARKING DIAGRAMS
4
4
Drain
12 3
DPAK CASE 369AA
Style 2
4
YWW T
4228
1 Gate
2 Drain
3 Source
4 Drain
YWW T
4228
1 2 3
DPAK CASE 369D
Style 2
T4228 Y WW
Device Code = Year = Work Week
12 3 Gate Drain Source
ORDERING INFORMATION
Device
P.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NTD60N02R |
ON |
Power MOSFET | |
2 | NTD60 |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS | |
3 | NTD6414AN |
ON Semiconductor |
N-Channel Power MOSFET | |
4 | NTD6415AN |
ON Semiconductor |
N-Channel Power MOSFET | |
5 | NTD6415ANL |
ON Semiconductor |
N-Channel Power MOSFET 100 V / 23 A / 56 mome Logic Level | |
6 | NTD6416AN |
ON Semiconductor |
N-Channel Power MOSFET | |
7 | NTD6416ANL |
ON Semiconductor |
N-Channel Power MOSFET | |
8 | NTD65N03R |
ON Semiconductor |
Power MOSFET | |
9 | NTD6600N |
ON Semiconductor |
Power MOSFET | |
10 | NTD6N40 |
ON Semiconductor |
Power MOSFET | |
11 | NTD |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS | |
12 | NTD |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |