NTD6415ANL N- Channel Power MOSFET 100 V, 23 A, 56 mΩ, Logic Level Features www.DataSheet4U.com http://onsemi.com Low RDS(on) 100% Avalanche Tested AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS 100 V RDS(on) MAX 56 mΩ @ 4.5 V 52 mΩ @ 10 V D ID MAX 23 A MAXIMUM RATINGS (TJ = 25C unless othe.
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http://onsemi.com
Low RDS(on) 100% Avalanche Tested AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
V(BR)DSS 100 V
RDS(on) MAX 56 mΩ @ 4.5 V 52 mΩ @ 10 V D
ID MAX 23 A
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter Drain--to--Source Voltage Gate--to--Source Voltage -- Continuous Continuous Drain Current Power Dissipation Pulsed Drain Current Steady State Steady State TC = 25C TC = 100C TC = 25C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS ID Value 100 ±20 23 16 83 80 --55 to +175 23 79 W A C A mJ Unit V V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NTD6415AN |
ON Semiconductor |
N-Channel Power MOSFET | |
2 | NTD6414AN |
ON Semiconductor |
N-Channel Power MOSFET | |
3 | NTD6416AN |
ON Semiconductor |
N-Channel Power MOSFET | |
4 | NTD6416ANL |
ON Semiconductor |
N-Channel Power MOSFET | |
5 | NTD60 |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS | |
6 | NTD60N02R |
ON |
Power MOSFET | |
7 | NTD60N03 |
ON Semiconductor |
Power MOSFET | |
8 | NTD65N03R |
ON Semiconductor |
Power MOSFET | |
9 | NTD6600N |
ON Semiconductor |
Power MOSFET | |
10 | NTD6N40 |
ON Semiconductor |
Power MOSFET | |
11 | NTD |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS | |
12 | NTD |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |