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CYStech Electronics Corp. Spec. No. : C895L3 Issued Date : 2016.11.26 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode MOSFET MTBH0N25L3 Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package BVDSS ID @ VGS=10V, TA=25°C RDSON@VGS=10V, ID=1A RDSON@VGS=4.5V, ID=1A 250V 1.2A 722mΩ (typ.) 732mΩ (typ.) Equ.
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating & Halogen-free package
BVDSS ID @ VGS=10V, TA=25°C RDSON@VGS=10V, ID=1A RDSON@VGS=4.5V, ID=1A
250V
1.2A 722mΩ (typ.) 732mΩ (typ.)
Equivalent Circuit
MTBH0N25L3
G：Gate D：Drain S：Source
Outline
SOT-223
D
S D G
Ordering Information
Device MTBH0N25L3-0-T3-G
Package
SOT-223 (Pb-free lead plating & Halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, z.
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|---|---|---|---|---|
| 1 | MTBH0N25J3 |
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|
| 2 | MTB |
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| 3 | MTB-F000329MNHNAA-B |
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| 4 | MTB-F000368MNHNAA |
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| 5 | MTB001 |
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| 6 | MTB001D01-1 |
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| 7 | MTB010A03H8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET |
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| 8 | MTB010A06RH8 |
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| 9 | MTB010N06I3 |
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| 10 | MTB010N06RH8 |
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| 11 | MTB010N06RI3 |
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| 12 | MTB010N06RJ3 |
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|