CYStech Electronics Corp. Spec. No. : C895J3 Issued Date : 2015.12.10 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTBH0N25J3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDSON(TYP) VGS=10V, ID=3A VGS=4.5V, ID=2A Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package 250V 3.5A 1.
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating and halogen-free package
250V 3.5A 1.0A 780mΩ 735mΩ
Equivalent Circuit
MTBH0N25J3
Outline
TO-252(DPAK)
G:Gate D:Drain S:Source
G DS
Ordering Information
Device
Package
MTBH0N25J3-0-T3-G
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBH0N25J3
CYStek Product Spe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTBH0N25L3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
2 | MTB |
RUBYCON CORPORATION |
METALLIZED POLYESTER FILM CAPACITORS | |
3 | MTB-F000329MNHNAA-B |
Microtips |
LCD Module | |
4 | MTB-F000368MNHNAA |
Microtips |
LCD Module | |
5 | MTB001 |
Shindengen Electric |
High Output Interface Driver ICs | |
6 | MTB001D01-1 |
CSOT |
LCD Module | |
7 | MTB010A03H8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET | |
8 | MTB010A06RH8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET | |
9 | MTB010N06I3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
10 | MTB010N06RH8 |
CYStech |
N-Channel Enhancement Mode Power MOSFET | |
11 | MTB010N06RI3 |
CYStech |
N-Channel MOSFET | |
12 | MTB010N06RJ3 |
CYStech |
N-Channel MOSFET |