MRF6V2010NBR1 - Freescale Semiconductor

MRF6V2010NBR1 RF Power Field Effect Transistor

95 Ω, 100 MHz Long Ferrite Beads 1000 pF Chip Capacitors 10 μF, 35 V Tantalum Capacitor 22 μF, 35 V Tantalum Capacitor 39 K pF Chip Capacitors 22 K pF Chip Capacitors 0.1 μF Chip Capacitors 2.2 μF, 50 V Chip Capacitors 0.6 - 4.5 pF Variable Capacitor, Gigatrim 12 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitor 27 pF Chip Capacitor 17.5 nH Inductor 82 n.

Features

• Integrated ESD Protection
• Excellent Thermal Stability
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 200°C Capable Plastic Package
• RoHS Compliant
• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6V2010NR1 MRF6V2010NBR1 10 - 450 MHz, 10 W, 50 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265 - 08, STYLE 1 TO - 270 - 2 PLASTIC MRF6V2010NR1 CASE 1337 - 03, STYLE 1 TO - 272 - 2 PLASTIC MRF6V2010NBR1 www.DataSheet4U.com Table 1. Maximum Ratings Ra.