MRF6V2010N - NXP

MRF6V2010N RF Power FET

NXP Semiconductors Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.  Typical CW performance at 220 MHz: VDD = 50.

Features

 Characterized with series equivalent large--signal impedance parameters
 Qualified up to a maximum of 50 VDD operation
 Integrated ESD protection
 225C capable plastic package Document Number: MRF6V2010N Rev. 6, 9/2016 MRF6V2010N MRF6V2010NB MRF6V2010GN 10--450 MHz, 10 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs TO--270--2 PLASTIC MRF6V2010N TO--272--2 PLASTIC MRF6V2010NB TO--270G--2 PLASTIC MRF6V2010GN Gate 2 1 Drain (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections  2007
  –2008, 2010, 2016 NXP B.V. RF De.