MRF6V2010NBR1 |
Part Number | MRF6V2010NBR1 |
Manufacturer | Freescale Semiconductor |
Description | 95 Ω, 100 MHz Long Ferrite Beads 1000 pF Chip Capacitors 10 μF, 35 V Tantalum Capacitor 22 μF, 35 V Tantalum Capacitor 39 K pF Chip Capacitors 22 K pF Chip Capacitors 0.1 μF Chip Capacitors 2.2 μF, 50... |
Features |
• Integrated ESD Protection • Excellent Thermal Stability • Facilitates Manual Gain Control, ALC and Modulation Techniques • 200°C Capable Plastic Package • RoHS Compliant • TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. • TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6V2010NR1 MRF6V2010NBR1 10 - 450 MHz, 10 W, 50 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265 - 08, STYLE 1 TO - 270 - 2 PLASTIC MRF6V2010NR1 CASE 1337 - 03, STYLE 1 TO - 272 - 2 PLASTIC MRF6V2010NBR1 www.DataSheet4U.com Table 1. Maximum Ratings Ra... |
Document |
MRF6V2010NBR1 Data Sheet
PDF 1.62MB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MRF6V2010NB |
NXP |
RF Power FET | |
2 | MRF6V2010N |
NXP |
RF Power FET | |
3 | MRF6V2010NR1 |
Freescale Semiconductor |
RF Power Field Effect Transistor | |
4 | MRF6V2010GN |
NXP |
RF Power FET | |
5 | MRF6V2150N |
Motorola Semiconductor |
RF Power Field Effect Transistor |