MRF6V2300NR1 - NXP

MRF6V2300NR1 RF Power FET

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance: VDD = 50 Volts.

Features

• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MRF6V2300N Rev. 5, 4/2010 MRF6V2300NR1 MRF6V2300NBR1 10--600 MHz, 300 W, 50 V LATERAL N--CHANNEL SINGLE--ENDED BROADBAND RF POWER MOSFETs CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC MRF6V2300NR1 CASE 1484--04, STYLE 1 TO--272 WB--4 PLASTIC MRF6V2300NBR1 PARTS ARE SINGLE--ENDED Table 1. Maximum Ratings Rating Dr.