MRF6V2150NB - Motorola Semiconductor

MRF6V2150NB RF Power Field Effect Transistor

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use i.

Features

- 272 WB - 4 PLASTIC MRF6V2300NB PARTS ARE SINGLE - ENDED Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TJ Value - 0.5 +110 - 0.5 + 12 - 65 to +150 225 Unit Vdc Vdc °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature TBD°C, TBD W CW Case Temperature TBD°C, TBD W CW Symbol RθJC Value (3) TBD TBD Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf..