NXP Semiconductors Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. Typical CW performance at 220 MHz: VDD = 50.
Characterized with series equivalent large--signal impedance parameters
Qualified up to a maximum of 50 VDD operation
Integrated ESD protection
225C capable plastic package
Document Number: MRF6V2010N Rev. 6, 9/2016
MRF6V2010N MRF6V2010NB MRF6V2010GN
10--450 MHz, 10 W, 50 V LATERAL N--CHANNEL
BROADBAND RF POWER MOSFETs
TO--270--2 PLASTIC MRF6V2010N
TO--272--2 PLASTIC MRF6V2010NB
TO--270G--2 PLASTIC
MRF6V2010GN
Gate 2
1 Drain
(Top View) Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
2007
–2008, 2010, 2016 NXP B.V.
RF De.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MRF6V2010N |
NXP |
RF Power FET | |
2 | MRF6V2010NBR1 |
Freescale Semiconductor |
RF Power Field Effect Transistor | |
3 | MRF6V2010NR1 |
Freescale Semiconductor |
RF Power Field Effect Transistor | |
4 | MRF6V2010GN |
NXP |
RF Power FET | |
5 | MRF6V2150N |
Motorola Semiconductor |
RF Power Field Effect Transistor | |
6 | MRF6V2150NB |
Motorola Semiconductor |
RF Power Field Effect Transistor | |
7 | MRF6V2150NBR1 |
Freescale Semiconductor |
RF Power FET | |
8 | MRF6V2150NR1 |
Freescale Semiconductor |
RF Power FET | |
9 | MRF6V2300N |
Motorola Semiconductor |
RF Power Field Effect Transistor | |
10 | MRF6V2300NB |
Motorola Semiconductor |
RF Power Field Effect Transistor | |
11 | MRF6V2300NBR1 |
NXP |
RF Power FET | |
12 | MRF6V2300NR1 |
NXP |
RF Power FET |