www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use i.
- 272 WB - 4 PLASTIC MRF6V2300NB PARTS ARE SINGLE - ENDED Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TJ Value - 0.5 +110 - 0.5 + 12 - 65 to +150 225 Unit Vdc Vdc °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature TBD°C, TBD W CW Case Temperature TBD°C, TBD W CW Symbol RθJC Value (3) TBD TBD Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MRF6V2150NB |
Motorola Semiconductor |
RF Power Field Effect Transistor | |
2 | MRF6V2150NBR1 |
Freescale Semiconductor |
RF Power FET | |
3 | MRF6V2150NR1 |
Freescale Semiconductor |
RF Power FET | |
4 | MRF6V2010GN |
NXP |
RF Power FET | |
5 | MRF6V2010N |
NXP |
RF Power FET | |
6 | MRF6V2010NB |
NXP |
RF Power FET | |
7 | MRF6V2010NBR1 |
Freescale Semiconductor |
RF Power Field Effect Transistor | |
8 | MRF6V2010NR1 |
Freescale Semiconductor |
RF Power Field Effect Transistor | |
9 | MRF6V2300N |
Motorola Semiconductor |
RF Power Field Effect Transistor | |
10 | MRF6V2300NB |
Motorola Semiconductor |
RF Power Field Effect Transistor | |
11 | MRF6V2300NBR1 |
NXP |
RF Power FET | |
12 | MRF6V2300NR1 |
NXP |
RF Power FET |