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MRF6V2010NB |
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| Part Number | MRF6V2010NB |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | NXP Semiconductors Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies... |
| Features |
Characterized with series equivalent large--signal impedance parameters Qualified up to a maximum of 50 VDD operation Integrated ESD protection 225C capable plastic package Document Number: MRF6V2010N Rev. 6, 9/2016 MRF6V2010N MRF6V2010NB MRF6V2010GN 10--450 MHz, 10 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs TO--270--2 PLASTIC MRF6V2010N TO--272--2 PLASTIC MRF6V2010NB TO--270G--2 PLASTIC MRF6V2010GN Gate 2 1 Drain (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections 2007 –2008, 2010, 2016 NXP B.V. RF De... |
| Document |
 MRF6V2010NB Data Sheet
PDF 1.42MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF6V2010N |
NXP |
RF Power FET |
|
| 2 | MRF6V2010NBR1 |
Freescale Semiconductor |
RF Power Field Effect Transistor |
|
| 3 | MRF6V2010NR1 |
Freescale Semiconductor |
RF Power Field Effect Transistor |
|
| 4 | MRF6V2010GN |
NXP |
RF Power FET |
|
| 5 | MRF6V2150N |
Motorola Semiconductor |
RF Power Field Effect Transistor |
|