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The MRF581 is Designed for High current low Power Amplifier Applications up to 1.0 GHz. PACKAGE STYLE Dim. Are in mm FEATURES: • Low Noise Figure • Low Intermodulation Distortion • High Gain • Omnigold™ Metalization System MAXIMUM RATINGS IC 200 mA VCBO 36 V VCEO 18 V VEBO 2.5 V PDISS 2.5 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +20.
• Low Noise Figure
• Low Intermodulation Distortion
• High Gain
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 200 mA
VCBO
36 V
VCEO
18 V
VEBO
2.5 V
PDISS
2.5 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +200 °C
Leads 1 and 3 = Emitter 2 = Collector 4 = Base
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 1.0 mA
BVCEO
IC = 1.0 mA
BVEBO
IE = 100 µA
IEBO VEB = 2.0 V
ICBO
VCB = 15 V
hFE VCE = 5.0 V
IC = 50 mA
MINIMUM TYPICAL MAXIMUM 36 18 2.5 100 100 50 200
UNITS V V V µA µA ---
Ccb VCB = 10 V
f = 1.0 MHz
1.4 2.0 pF
GP VCC = 10 V
IC =.
MRF581 - Motorola
MRF580 MAXIMUM RATINGS Rating Symbol MRF581 MRF581 Unit Collector-Emitter Voltage vCEO 18 18 Vdc Collector-Base.
MRF581 - Advanced Power Technology
Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Sym.
MRF581 - Microsemi
Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Sy.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF580 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 2 | MRF5811LT1 |
Motorola |
NPN Silicon High Frequency Transistor |
|
| 3 | MRF5812 |
ASI |
NPN Silicon RF Microwave Transistor |
|
| 4 | MRF5812 |
Advanced Power Technology |
Bipolar Junction Transistor |
|
| 5 | MRF5812G |
Advanced Power Technology |
Bipolar Junction Transistor |
|
| 6 | MRF581A |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 7 | MRF581A |
Advanced Power Technology |
RF and Microwave Discrete Low Power Power Transistors |
|
| 8 | MRF581AG |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 9 | MRF581G |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 10 | MRF586 |
ASI |
NPN Silicon High Frequency Transistor |
|
| 11 | MRF587 |
Motorola |
NPN Silicon High Frequency Transistor |
|
| 12 | MRF5003 |
Motorola |
N-CHANNEL BROADBAND RF POWER FET |
|