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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5003/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source .
ch Reel.
• Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
MRF5003
3.0 W, 7.5 V, 512 MHz N
–CHANNEL BROADBAND RF POWER FET
CASE 430
–01, STYLE 2
MAXIMUM RATINGS
Rating Drain
–Source Voltage Drain
–Gate Voltage (RGS = 1.0 Meg Ohm) Gate
–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 36 36 ± 20 1.7 12.5 0.07
– 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF5007 |
Motorola |
N-CHANNEL BROADBAND RF POWER FET |
|
| 2 | MRF5007R1 |
Motorola |
N-CHANNEL BROADBAND RF POWER FET |
|
| 3 | MRF501 |
Motorola Semiconductor |
(MRF501 / MRF502) High Frequency Transistors |
|
| 4 | MRF5015 |
Motorola |
N-CHANNEL BROADBAND RF POWER FET |
|
| 5 | MRF502 |
Motorola Semiconductor |
(MRF501 / MRF502) High Frequency Transistors |
|
| 6 | MRF5035 |
Motorola |
N-CHANNEL BROADBAND RF POWER FET |
|
| 7 | MRF511 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 8 | MRF515 |
Motorola |
High Frequency Transistor |
|
| 9 | MRF517 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 10 | MRF517 |
ASI |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
|
| 11 | MRF517 |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 12 | MRF517 |
Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|