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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF587/D The RF Line NPN Silicon High-Frequency Transistor . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. • Low Noise Figure — NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA • High Power Gai.
YLE 1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector
–Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector
–Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) Emitter
–Base Breakdown Voltage (IC = 0, IE = 0.1 mAdc) Collector Cutoff Current (VCB = 10 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 17 34 2.5 — — — — — — — — 50 Vdc Vdc Vdc µAdc
ON CHARACTERISTICS
DC Current Gain (1) (IC = 50 mAdc, VCE = 5.0 Vdc) NOTE: 1. 300 µs pulse on Tektronix 576 or equivalent. hFE 50 — 200 — (continued)
REV 6
RF DEVICE DAT.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF580 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 2 | MRF581 |
ASI |
NPN SILICON RF TRANSISTOR |
|
| 3 | MRF581 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 4 | MRF581 |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 5 | MRF581 |
Advanced Power Technology |
RF and Microwave Discrete Low Power Power Transistors |
|
| 6 | MRF5811LT1 |
Motorola |
NPN Silicon High Frequency Transistor |
|
| 7 | MRF5812 |
ASI |
NPN Silicon RF Microwave Transistor |
|
| 8 | MRF5812 |
Advanced Power Technology |
Bipolar Junction Transistor |
|
| 9 | MRF5812G |
Advanced Power Technology |
Bipolar Junction Transistor |
|
| 10 | MRF581A |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 11 | MRF581A |
Advanced Power Technology |
RF and Microwave Discrete Low Power Power Transistors |
|
| 12 | MRF581AG |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|