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MRF581 |
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| Part Number | MRF581 |
| Manufacturer | ASI |
| Description | The MRF581 is Designed for High current low Power Amplifier Applications up to 1.0 GHz. PACKAGE STYLE Dim. Are in mm FEATURES: • Low Noise Figure • Low Intermodulation Distortion • High Gain • Omni... |
| Features |
• Low Noise Figure • Low Intermodulation Distortion • High Gain • Omnigold™ Metalization System MAXIMUM RATINGS IC 200 mA VCBO 36 V VCEO 18 V VEBO 2.5 V PDISS 2.5 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C Leads 1 and 3 = Emitter 2 = Collector 4 = Base CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS BVCBO IC = 1.0 mA BVCEO IC = 1.0 mA BVEBO IE = 100 µA IEBO VEB = 2.0 V ICBO VCB = 15 V hFE VCE = 5.0 V IC = 50 mA MINIMUM TYPICAL MAXIMUM 36 18 2.5 100 100 50 200 UNITS V V V µA µA --- Ccb VCB = 10 V f = 1.0 MHz 1.4 2.0 pF GP VCC = 10 V IC =... |
| Document |
 MRF581 Data Sheet
PDF 26.57KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF580 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 2 | MRF581 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 3 | MRF581 |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 4 | MRF581 |
Advanced Power Technology |
RF and Microwave Discrete Low Power Power Transistors |
|
| 5 | MRF5811LT1 |
Motorola |
NPN Silicon High Frequency Transistor |
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