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MRF581 |
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| Part Number | MRF581 |
| Manufacturer | Advanced Power Technology |
| Description | Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage... |
| Features |
• • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current MRF581 18 30 2.5 200 MRF581A 15 Unit Vdc Vdc Vdc mA Thermal Data P D D Total Device Dissipation @ TC = 50º C Derate above 50º C Total Device Dissipation @ TC = 25º C Derate above 25º C Storage J... |
| Document |
 MRF581 Data Sheet
PDF 265.54KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MRF580 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 2 | MRF581 |
ASI |
NPN SILICON RF TRANSISTOR |
|
| 3 | MRF581 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 4 | MRF581 |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 5 | MRF5811LT1 |
Motorola |
NPN Silicon High Frequency Transistor |
|