Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
MRF580 MAXIMUM RATINGS Rating Symbol MRF581 MRF581 Unit Collector-Emitter Voltage vCEO 18 18 Vdc Collector-Base Voltage vCBO 36 36 Vdc Emitter-Base Voltage —Collector Current Continuous vEBO "C 2.5 200 2.5 Vdc 200 mAdc Total Device Dissipation @TC = 50°C(1) Derate above Tq = 50°C PD 2.5 2.5 Watts 25 25 mW/°C Operating and Storage Junction .
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF581 |
ASI |
NPN SILICON RF TRANSISTOR |
|
| 2 | MRF581 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 3 | MRF581 |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 4 | MRF581 |
Advanced Power Technology |
RF and Microwave Discrete Low Power Power Transistors |
|
| 5 | MRF5811LT1 |
Motorola |
NPN Silicon High Frequency Transistor |
|
| 6 | MRF5812 |
ASI |
NPN Silicon RF Microwave Transistor |
|
| 7 | MRF5812 |
Advanced Power Technology |
Bipolar Junction Transistor |
|
| 8 | MRF5812G |
Advanced Power Technology |
Bipolar Junction Transistor |
|
| 9 | MRF581A |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 10 | MRF581A |
Advanced Power Technology |
RF and Microwave Discrete Low Power Power Transistors |
|
| 11 | MRF581AG |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 12 | MRF581G |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|