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Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current MRF581 MRF581A 18 15 30 2.5 200 Unit Vdc Vdc Vdc mA Thermal Data P D P D Tstg Total Device Dissipation @ TC.
• Low Noise - 2.5 dB @ 500 MHZ
• Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
• Ftau - 5.0 GHz @ 10v, 75mA
• Cost Effective MacroX Package
Macro X
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
MRF581 MRF581A 18 15 30 2.5 200
Unit Vdc Vdc Vdc mA
Thermal Data
P
D
P
D
Tstg
Total Device Dissipation @ TC = 50ºC Derate above 50ºC
Total Device Dissipation @ TC = 25ºC Derate above.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF581A |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 2 | MRF581A |
Advanced Power Technology |
RF and Microwave Discrete Low Power Power Transistors |
|
| 3 | MRF581 |
ASI |
NPN SILICON RF TRANSISTOR |
|
| 4 | MRF581 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 5 | MRF581 |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 6 | MRF581 |
Advanced Power Technology |
RF and Microwave Discrete Low Power Power Transistors |
|
| 7 | MRF5811LT1 |
Motorola |
NPN Silicon High Frequency Transistor |
|
| 8 | MRF5812 |
ASI |
NPN Silicon RF Microwave Transistor |
|
| 9 | MRF5812 |
Advanced Power Technology |
Bipolar Junction Transistor |
|
| 10 | MRF5812G |
Advanced Power Technology |
Bipolar Junction Transistor |
|
| 11 | MRF581G |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 12 | MRF580 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|