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·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) ·Complement to Type MJD32C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and low speed switching applications. ABSOLUTE MAX.
ebsite：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V ICES Collector Cutoff Current VCE= 100V; VEB= 0 ICEO Collector Cutoff Current VCE= 60V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 4V hFE-2 DC Current Gain IC= 3A ; VCE= 4V .
MJD31C - nexperia
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP co.
MJD31C - GME
Epitaxial Planar NPN Transistor FEATURES Low formed for surface mount application. Pb Lead-free Electrically sim.
MJD31C - Diodes
Features BVCEO > 100V IC = 3A high Continuous Collector Current ICM = 5A Peak Pulse Current Ideal for Power Swit.
MJD31C - Kexin
SMD Type Transistors Complementary Power Transistors MJD31,MJD31C(NPN) MJD32,MJD32C(PNP) Features Lead Formed for Sur.
MJD31C - CDIL
SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Collector Cu.
MJD31C - ON
MJD31 (NPN), MJD32 (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purp.
MJD31C - ST Microelectronics
The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional hi.
MJD31C - Fairchild
MJD31/31C — NPN Epitaxial Silicon Transistor MJD31/31C NPN Epitaxial Silicon Transistor Features • General Purpose Ampl.
MJD31C - Motorola
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD31/D Complementary Power Transistors • • • • MJD31,C.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJD31 |
Kexin |
Complementary Power Transistors |
|
| 2 | MJD31 |
CDIL |
COMPLEMENTARY PLASTIC POWER TRANSISTORS |
|
| 3 | MJD31 |
Fairchild |
NPN Epitaxial Silicon Transistor |
|
| 4 | MJD31 |
Motorola |
SILICON POWER TRANSISTORS |
|
| 5 | MJD31 |
ON Semiconductor |
(MJD31 / MJD32) Complementary Power Transistors |
|
| 6 | MJD31B |
ST Microelectronics |
Complementary Silicon Power Transistors |
|
| 7 | MJD31C |
SeCoS |
NPN Transistor |
|
| 8 | MJD31C |
TAITRON |
SMD Power Transistor |
|
| 9 | MJD31CA |
nexperia |
3A NPN high power bipolar transistor |
|
| 10 | MJD31CQ |
Diodes |
100V NPN HIGH VOLTAGE TRANSISTOR |
|
| 11 | MJD31CT4-A |
STMicroelectronics |
Low voltage NPN power transistor |
|
| 12 | MJD31CUQ |
Diodes |
100V NPN HIGH VOLTAGE TRANSISTOR |
|