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MJD31C |
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| Part Number | MJD31C |
| Manufacturer | Inchange Semiconductor |
| Description | ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) ·Complement to Type MJD32C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for ... |
| Features |
ebsite：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 4V
ICES
Collector Cutoff Current
VCE= 100V; VEB= 0
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
hFE-2
DC Current Gain
IC= 3A ; VCE= 4V
... |
| Document |
 MJD31C Data Sheet
PDF 250.13KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJD31 |
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| 2 | MJD31 |
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| 3 | MJD31 |
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| 4 | MJD31 |
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| 5 | MJD31 |
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