This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features BVCEO > 100V IC = 3A high Continuous Collector Current ICM = 5A Peak Pulse Current Ideal for Power Switching or Amplification Applications Complementary PNP Type: MJD32CQ Totally Lead-Free & Fully RoHS Compliant (Notes .
BVCEO > 100V
IC = 3A high Continuous Collector Current
ICM = 5A Peak Pulse Current
Ideal for Power Switching or Amplification Applications
Complementary PNP Type: MJD32CQ
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
MJD31CQ
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, "Green" Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-ST.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MJD31C |
SeCoS |
NPN Transistor | |
2 | MJD31C |
Diodes |
NPN Transistor | |
3 | MJD31C |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
4 | MJD31C |
Kexin |
Complementary Power Transistors | |
5 | MJD31C |
CDIL |
COMPLEMENTARY PLASTIC POWER TRANSISTORS | |
6 | MJD31C |
ON |
SILICON POWER TRANSISTORS | |
7 | MJD31C |
ST Microelectronics |
Low voltage NPN power transistor | |
8 | MJD31C |
Fairchild |
NPN Epitaxial Silicon Transistor | |
9 | MJD31C |
Motorola |
SILICON POWER TRANSISTORS | |
10 | MJD31C |
nexperia |
3A NPN transistor | |
11 | MJD31C |
GME |
Epitaxial Planar NPN Transistor | |
12 | MJD31C |
TAITRON |
SMD Power Transistor |