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The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector.
s the values are intented negative. May 1999 1/5 MJD31B/31C - MJD32B/32C THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 8.33 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO I EBO V CEO(sus) Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitt er Voltage DC Current Gain Dynamic Current G ain Test Cond ition s V CE = Max.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJD31 |
Kexin |
Complementary Power Transistors |
|
| 2 | MJD31 |
CDIL |
COMPLEMENTARY PLASTIC POWER TRANSISTORS |
|
| 3 | MJD31 |
Fairchild |
NPN Epitaxial Silicon Transistor |
|
| 4 | MJD31 |
Motorola |
SILICON POWER TRANSISTORS |
|
| 5 | MJD31 |
ON Semiconductor |
(MJD31 / MJD32) Complementary Power Transistors |
|
| 6 | MJD31C |
SeCoS |
NPN Transistor |
|
| 7 | MJD31C |
Diodes |
NPN Transistor |
|
| 8 | MJD31C |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 9 | MJD31C |
Kexin |
Complementary Power Transistors |
|
| 10 | MJD31C |
CDIL |
COMPLEMENTARY PLASTIC POWER TRANSISTORS |
|
| 11 | MJD31C |
ON |
SILICON POWER TRANSISTORS |
|
| 12 | MJD31C |
ST Microelectronics |
Low voltage NPN power transistor |
|