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NPN high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32CA 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD31 series • Low collector emitter saturation voltage • Fast switching speeds •.
• High thermal power dissipation capability
• High energy efficiency due to less heat generation
• Electrically similar to popular MJD31 series
• Low collector emitter saturation voltage
• Fast switching speeds
• AEC-Q101 qualified
3. Applications
• Power management
• Load switch
• Linear mode voltage regulator
• Constant current drive backlighting application
• Motor drive
• Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO
collector-emitter voltage
IC collector current
ICM peak collector current
hFE DC current gain
Conditions open base
s.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJD31C |
SeCoS |
NPN Transistor |
|
| 2 | MJD31C |
Diodes |
NPN Transistor |
|
| 3 | MJD31C |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | MJD31C |
Kexin |
Complementary Power Transistors |
|
| 5 | MJD31C |
CDIL |
COMPLEMENTARY PLASTIC POWER TRANSISTORS |
|
| 6 | MJD31C |
ON |
SILICON POWER TRANSISTORS |
|
| 7 | MJD31C |
ST Microelectronics |
Low voltage NPN power transistor |
|
| 8 | MJD31C |
Fairchild |
NPN Epitaxial Silicon Transistor |
|
| 9 | MJD31C |
Motorola |
SILICON POWER TRANSISTORS |
|
| 10 | MJD31C |
nexperia |
3A NPN transistor |
|
| 11 | MJD31C |
GME |
Epitaxial Planar NPN Transistor |
|
| 12 | MJD31C |
TAITRON |
SMD Power Transistor |
|