MJD31C GME Epitaxial Planar NPN Transistor Datasheet, en stock, prix

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MJD31C

GME
MJD31C
MJD31C MJD31C
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Part Number MJD31C
Manufacturer GME
Description Epitaxial Planar NPN Transistor FEATURES  Low formed for surface mount application. Pb Lead-free  Electrically similar to popular and TIP31C.  Straight Lead. APPLICATIONS  General purpose am...
Features
 Low formed for surface mount application. Pb Lead-free
 Electrically similar to popular and TIP31C.
 Straight Lead. APPLICATIONS
 General purpose amplifier.
 Low speed switching applications. Production specification MJD31C TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 3A ICP Collector Current -Peak 5A IB Base Current 1A PC Collector Power Dissipation 1....

Document Datasheet MJD31C Data Sheet
PDF 214.91KB
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