MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocki.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MGP4N60E |
Motorola |
Insulated Gate Bipolar Transistor | |
2 | MGP11N60E |
Motorola |
Insulated Gate Bipolar Transistor | |
3 | MGP11N60ED |
Motorola |
Insulated Gate Bipolar Transistor | |
4 | MGP14N60E |
Motorola |
Insulated Gate Bipolar Transistor | |
5 | MGP15N35CL |
ON |
Internally Clamped N-Channel IGBT | |
6 | MGP15N38CL |
Motorola |
Internally Clamped N-Channel IGBT | |
7 | MGP15N40CL |
ON |
Internally Clamped N-Channel IGBT | |
8 | MGP15N43CL |
Motorola |
Internally Clamped N-Channel IGBT | |
9 | MGP15N60U |
Motorola |
Insulated Gate Bipolar Transistor | |
10 | MGP19N35CL |
ON Semiconductor |
IGBT | |
11 | MGP20N14CL |
Motorola |
Internally Clamped / N-Channel IGBT | |
12 | MGP20N35CL |
Motorola |
SMARTDISCRETES Internally Clamped / N-Channel IGBT |