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MGP15N35CL Internally Clamped N-Channel IGBT

MGP15N35CL, MGB15N35CL Preferred Device Ignition IGBT 15 Amps, 350 Volts N−Channel TO−220 and D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high.

Features

monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
• Ideal for Coil−On−Plug, IGBT−On−Coil, or Distributorless Ignition System Applications
• High Pulsed Current Capability up to 50 A
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Dev.

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