MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate Collector Over– Voltage Protection from monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate – Collector Clamp Limits Stress Applied t.
Gate
–Emitter ESD protection, Gate Collector Over
– Voltage Protection from monolithic circuitry for usage as an Ignition Coil Driver.
• Temperature Compensated Gate
– Collector Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
Order this document by MGP15N38CL/D
MGP15N38CL
15 AMPERES N
–CHANNEL IGBT
VCE(on) = 1.8 V 380 VOLTS CLAMPED
C
G GC
E
CASE 221A
–09 STYLE 9 TO
–220AB
E
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating
S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MGP15N35CL |
ON |
Internally Clamped N-Channel IGBT | |
2 | MGP15N40CL |
ON |
Internally Clamped N-Channel IGBT | |
3 | MGP15N43CL |
Motorola |
Internally Clamped N-Channel IGBT | |
4 | MGP15N60U |
Motorola |
Insulated Gate Bipolar Transistor | |
5 | MGP11N60E |
Motorola |
Insulated Gate Bipolar Transistor | |
6 | MGP11N60ED |
Motorola |
Insulated Gate Bipolar Transistor | |
7 | MGP14N60E |
Motorola |
Insulated Gate Bipolar Transistor | |
8 | MGP19N35CL |
ON Semiconductor |
IGBT | |
9 | MGP20N14CL |
Motorola |
Internally Clamped / N-Channel IGBT | |
10 | MGP20N35CL |
Motorola |
SMARTDISCRETES Internally Clamped / N-Channel IGBT | |
11 | MGP20N40CL |
Motorola |
SMARTDISCRETES Internally Clamped / N-Channel IGBT | |
12 | MGP20N60U |
Motorola |
Insulated Gate Bipolar Transistor |