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MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocki.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MGP11N60E |
Motorola |
Insulated Gate Bipolar Transistor |
|
| 2 | MGP14N60E |
Motorola |
Insulated Gate Bipolar Transistor |
|
| 3 | MGP15N35CL |
ON |
Internally Clamped N-Channel IGBT |
|
| 4 | MGP15N38CL |
Motorola |
Internally Clamped N-Channel IGBT |
|
| 5 | MGP15N40CL |
ON |
Internally Clamped N-Channel IGBT |
|
| 6 | MGP15N43CL |
Motorola |
Internally Clamped N-Channel IGBT |
|
| 7 | MGP15N60U |
Motorola |
Insulated Gate Bipolar Transistor |
|
| 8 | MGP19N35CL |
ON Semiconductor |
IGBT |
|
| 9 | MGP20N14CL |
Motorola |
Internally Clamped / N-Channel IGBT |
|
| 10 | MGP20N35CL |
Motorola |
SMARTDISCRETES Internally Clamped / N-Channel IGBT |
|
| 11 | MGP20N40CL |
Motorola |
SMARTDISCRETES Internally Clamped / N-Channel IGBT |
|
| 12 | MGP20N60U |
Motorola |
Insulated Gate Bipolar Transistor |
|