MGP15N43CL - Motorola

MGP15N43CL Internally Clamped N-Channel IGBT

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate Collector Over– Voltage Protection from monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate – Collector Clamp Limits Stress Applied t.

Features

Gate
  –Emitter ESD protection, Gate Collector Over
  – Voltage Protection from monolithic circuitry for usage as an Ignition Coil Driver.
• Temperature Compensated Gate
  – Collector Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability C Order this document by MGP15N43CL/D MGP15N43CL 15 AMPERES N
  –CHANNEL IGBT VCE(on) = 1.8 V 430 VOLTS CLAMPED GG C E CASE 221A
  –09 STYLE 9 E TO
  –220AB MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Sy.