MGP20N35CL - Motorola

MGP20N35CL SMARTDISCRETES Internally Clamped / N-Channel IGBT

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP20N35CL/D Advanced Information IGBT SMARTDISCRETES™ Internally Clamped, N-Channel This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES ™ monolithic circuitry for usage as an Ignition Coil Dri.

Features

Gate
  –Emitter ESD protection, Gate
  –Collector overvoltage protection from SMARTDISCRETES ™ monolithic circuitry for usage as an Ignition Coil Driver.
• Temperature Compensated Gate
  –Drain Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors
• Low Saturation Voltage
• High Pulsed Current Capability MGP20N35CL 20 AMPERES VOLTAGE CLAMPED N
  –CHANNEL IGBT Vce(on) = 1.8 VOLTS 350 VOLTS (CLAMPED) ® C G G Rge C E E CASE 221A
  –06, Style 9 TO
  –220AB MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Col.