MGP19N35CL - ON Semiconductor

MGP19N35CL IGBT

MGP19N35CL, MGB19N35CL Preferred Device Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high.

Features

monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
• Ideal for IGBT−On−Coil or Distributorless Ignition System Applications
• High Pulsed Current Capability up to 50 A
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices
• Low S.