MGP21N60E - Motorola

MGP21N60E Insulated Gate Bipolar Transistor

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP21N60E/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically s.

Features

5°C 600 VOLTS SHORT CIRCUIT RATED LOW ON
  –VOLTAGE C G C G E CASE 221A
  –06 TO
  –220AB E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector
  –Emitter Voltage Collector
  –Gate Voltage (RGE = 1.0 MΩ) Gate
  –Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω) Thermal Resistance — Junction to Case
  – IGBT — Junction to Ambient Maxim.