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MGP21N60E |
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| Part Number | MGP21N60E |
| Manufacturer | Motorola |
| Description | MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP21N60E/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor ... |
| Features |
5°C 600 VOLTS SHORT CIRCUIT RATED LOW ON –VOLTAGE C G C G E CASE 221A –06 TO –220AB E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Gate Voltage (RGE = 1.0 MΩ) Gate –Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω) Thermal Resistance — Junction to Case – IGBT — Junction to Ambient Maxim... |
| Document |
 MGP21N60E Data Sheet
PDF 127.78KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MGP20N14CL |
Motorola |
Internally Clamped / N-Channel IGBT |
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| 2 | MGP20N35CL |
Motorola |
SMARTDISCRETES Internally Clamped / N-Channel IGBT |
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| 3 | MGP20N40CL |
Motorola |
SMARTDISCRETES Internally Clamped / N-Channel IGBT |
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| 4 | MGP20N60U |
Motorola |
Insulated Gate Bipolar Transistor |
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| 5 | MGP11N60E |
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Insulated Gate Bipolar Transistor |
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