6.5 700 Vss-0.3 ~ Vout+0.3 250 -25 ~ +85 -40 ~ +125 260℃, 10s UNIT V mA V mW ℃ ℃ 2(7) N~§NãtÿmñW3^VÛmw`R•yÑb€g–PQlSø Tel: 0755-8398 3377 / 135 9011 2223 http://www.gofotech.com ME6401Series Ver 04 Electrical Characteristics ME6401CXX&Cxx O (Vin=Vout+1V,Cin=Cout=1u,Ta=25 C Unless otherwise stated) PARAMETER Output Voltage Maximum Output Voltage Load Regu.
• Highly Accurate:±2%
• Output voltage range:1.2V~5.0V
• Low power consumption:Typ. =90μA
• Large output current :More than 450mA (Vout=2.8V)
• Dropout voltage: 200mV at 100mA and 400mV at 200mA;
• Highly Accurate y: ±2%
•Be available to regulator and reference voltage
• Packages:SOT23-6
precise, low power consumption, high regulators voltage, positive voltage manufactured using CMOS and laser trimming technologies .The series provides large currents with a significantly small dropout voltage. The series is compatible with low ESR ceramic capacitors .The current limiter’s foldback circuit als.
6.5 700 Vss-0.3 ~ Vout+0.3 250 -25 ~ +85 -40 ~ +125 260℃, 10s UNIT V mA V mW ℃ ℃ Tel: 0755-82948776 www. cnzls. com 2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ME6401CXX |
Microne |
Low ESR Cap Compatable Positive Voltage Regulators | |
2 | ME600815 |
Powerex Powers |
Three-Phase Diode Bridge Modules (150 Amperes/800 Volts) | |
3 | ME601215 |
Powerex Powers |
Three-Phase Diode Bridge Modules (150 Amperes/1200-1600 Volts) | |
4 | ME601615 |
Powerex Powers |
Three-Phase Diode Bridge Modules (150 Amperes/1200-1600 Volts) | |
5 | ME60N03 |
Matsuki |
30V N-Channel Enhancement Mode MOSFET | |
6 | ME60N03-G |
Matsuki |
30V N-Channel Enhancement Mode MOSFET | |
7 | ME60N03A |
Matsuki |
25V N-Channel Enhancement Mode MOSFET | |
8 | ME60N03AS |
Matsuki |
25V N-Channel Enhancement Mode MOSFET | |
9 | ME60N03S |
Matsuki |
N-Channel MOSFET | |
10 | ME60N03S-G |
Matsuki |
N-Channel MOSFET | |
11 | ME60N04 |
Matsuki |
N-Channel MOSFET | |
12 | ME60N04T |
Matsuki |
N-Channel MOSFET |