Powerex Three-Phase Diode Bridge Modules are designed for use in three-phase bridge applications. The modules are isolated consisting of six rectifier diodes. Features: P N 5 - M6 L H E Ⅺ Isolated Mounting P - DIA. (4 TYP.) Ⅺ Planar Chips ME601215, ME601615 Three-Phase Diode Bridge Modules 150 Amperes/1200-1600 Volts G Applications: Ⅺ Inverters Ⅺ DC.
P N 5 - M6 L H E Ⅺ Isolated Mounting P - DIA. (4 TYP.) Ⅺ Planar Chips ME601215, ME601615 Three-Phase Diode Bridge Modules 150 Amperes/1200-1600 Volts G Applications: Ⅺ Inverters Ⅺ DC Power Supplies Ⅺ AC Motor Control Front End Ordering Information: Select the complete eight digit module part number you desire from the table below. Example: ME601215 is a 1200 Volt, 150 Ampere ThreePhase Diode Bridge Module. Type ME60 Voltage Volts (x100) 12 16 Current Rating Amperes (x10) 15 N Outline Drawing Dimension A B C D E F G H J K L M N P Inches 3.54 3.07 2.91 2.60 1.97 1.26 1.22 1.18 0.90 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ME601615 |
Powerex Powers |
Three-Phase Diode Bridge Modules (150 Amperes/1200-1600 Volts) | |
2 | ME600815 |
Powerex Powers |
Three-Phase Diode Bridge Modules (150 Amperes/800 Volts) | |
3 | ME60N03 |
Matsuki |
30V N-Channel Enhancement Mode MOSFET | |
4 | ME60N03-G |
Matsuki |
30V N-Channel Enhancement Mode MOSFET | |
5 | ME60N03A |
Matsuki |
25V N-Channel Enhancement Mode MOSFET | |
6 | ME60N03AS |
Matsuki |
25V N-Channel Enhancement Mode MOSFET | |
7 | ME60N03S |
Matsuki |
N-Channel MOSFET | |
8 | ME60N03S-G |
Matsuki |
N-Channel MOSFET | |
9 | ME60N04 |
Matsuki |
N-Channel MOSFET | |
10 | ME60N04T |
Matsuki |
N-Channel MOSFET | |
11 | ME60N04T-G |
Matsuki |
N-Channel MOSFET | |
12 | ME60P06T |
Matsuki |
P-Channel MOSFET |