ME60N04 - Matsuki

ME60N04 N-Channel MOSFET

The ME60N04 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD inverter, computer power management and DC to DC convert.

Features

● RDS(ON)≦12mΩ@VGS=10V
● RDS(ON)≦17mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management
● DC/DC Converter
● LCD TV & Monitor Display inverter
● CCFL inverter
● Secondary Synchronous Rectification PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Tj=150℃,limited by package) TC=25℃ TA=25℃ Pulsed Drain Current Avalanche Energy with Single Pulse(L=1mH) Maximum .