ME60N03S-G - Matsuki

ME60N03S-G N-Channel MOSFET

ME60N03S/ME60N03S-G 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A ≦ 10mΩ RDS(ON), [email protected],Ids@15A ≦18.5mΩ FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for High-side switching of PWM application. PIN CONFIGURATION (TO-252) Top View APPLICATIONS ● Motherboard (V-.

Features

Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for High-side switching of PWM application. PIN CONFIGURATION (TO-252) Top View APPLICATIONS
● Motherboard (V-Core)
● Portable Equipment
● DC/DC Converter
● Load Switch
● LCD Display inverter
● IPC e Ordering Information: ME60N03S (Pb-free) ME60N03S-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage TC=25℃ Continuous Drain Current
* TC=70℃ TA=25℃ TA=70℃ Pulsed Drain Current TC=25℃ Maximum Po.