ME60N03A - Matsuki

ME60N03A 25V N-Channel Enhancement Mode MOSFET

25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), [email protected],Ids@30A =13m ME60N03A FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top V.

Features

Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Unless Otherwise Noted) Symbol VDSS VGSS ID IDM Limit 25 ±20 50 100 50 23 -55 to 150 110 15 Steady State 20 40 Unit V V A A W TA=25 TA=70 PD TJ, Tstg ) EAS RθJA RθJC Operating Junction and Storage Temper.