ME60N03AS 25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@30A ≦ 9mΩ RDS(ON), Vgs@ 5V,Ids@15A ≦18mΩ APPLICATIONS ● Motherboard (V-Core) ● DC/DC Converter ● Load Switch ● LCD Display inverter ● IPC FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and mo.
Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current
PIN
CONFIGURATION
(TO-252) Top View
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(Tj=150℃)
* Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ TC=25℃
Symbol
VDSS VGSS ID IDM PD TJ, Tstg EAS RθJA RθJC
Limit
25 ±20 53 100 40 25 -55 to 150 50 T≦10 sec Steady State 3.1 15 40
Unit
V V A A W ℃ mJ ℃/W ℃/W
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ME60N03A |
Matsuki |
25V N-Channel Enhancement Mode MOSFET | |
2 | ME60N03 |
Matsuki |
30V N-Channel Enhancement Mode MOSFET | |
3 | ME60N03-G |
Matsuki |
30V N-Channel Enhancement Mode MOSFET | |
4 | ME60N03S |
Matsuki |
N-Channel MOSFET | |
5 | ME60N03S-G |
Matsuki |
N-Channel MOSFET | |
6 | ME60N04 |
Matsuki |
N-Channel MOSFET | |
7 | ME60N04T |
Matsuki |
N-Channel MOSFET | |
8 | ME60N04T-G |
Matsuki |
N-Channel MOSFET | |
9 | ME600815 |
Powerex Powers |
Three-Phase Diode Bridge Modules (150 Amperes/800 Volts) | |
10 | ME601215 |
Powerex Powers |
Three-Phase Diode Bridge Modules (150 Amperes/1200-1600 Volts) | |
11 | ME601615 |
Powerex Powers |
Three-Phase Diode Bridge Modules (150 Amperes/1200-1600 Volts) | |
12 | ME60P06T |
Matsuki |
P-Channel MOSFET |