ME60N03-G - Matsuki

ME60N03-G 30V N-Channel Enhancement Mode MOSFET

The ME60N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD inverter, computer power management and DC to DC convert.

Features

● RDS(ON)≦8.5mΩ@VGS=10V
● RDS(ON)≦13mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management
● DC/DC Converter
● LCD TV & Monitor Display inverter
● CCFL inverter
● Secondary Synchronous Rectification PIN CONFIGURATION (TO-252-3L) Top View
* The Ordering Information: ME60N03 (Pb-free) ME60N03-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless O.